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| SPS01N60C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance VDS @ Tjmax RDS(on) ID 650 6 0.8 V A PG-TO251-3-11 Type SPS01N60C3 Package Ordering Code Marking 01N60C3 PG-TO251-3-11 - Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 0.6 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 0.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C Symbol ID Value 0.8 0.5 Unit A I D puls EAS 1.6 20 0.01 0.8 20 30 11 -55... +150 15 W C V/ns A V mJ VGS Ptot T j , T stg dv/dt Operating and storage temperature Reverse diode dv/dt 3) Rev. 2.1 Page 1 2008-04-07 SPS01N60C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 0.8 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.8A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=250, VGS=V DS V DS=600V, VGS=0V, Tj=25C, Tj=150C Symbol min. RthJC RthJA RthJA Tsold - Values typ. max. 11 75 75 50 260 Unit K/W C Values typ. 700 3 0.1 5.6 15.1 max. 3.9 600 2.1 - Unit V A 1 50 100 6 nA Gate-source leakage current I GSS V GS=30V, VDS=0V V GS=10V, ID=0.5A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Rev. 2.1 Page 2 2008-04-07 SPS01N60C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V DD=350V, ID=0.8A, V GS=0 to 10V V DD=350V, ID=0.8A Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Conditions min. V DS2*I D*RDS(on)max, ID=0.5A V GS=0V, V DS=25V, f=1MHz Values typ. 0.75 100 40 2.5 30 25 55 30 max. 82 45 - Unit S pF V DD=350V, V GS=0/10V, ID=0.8A, RG=100 ns - 0.9 2.2 3.9 5.5 5 - nC V(plateau) V DD=350V, ID=0.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak Page 3 2008-04-07 SPS01N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD t rr Q rr VGS =0V, I F=IS VR =350V, IF=IS , diF/dt=100A/s Symbol IS I SM Conditions min. TC=25C Values typ. 1 570 0.75 max. 0.8 1.6 1.2 970 - Unit A V ns C Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.225 0.395 0.603 0.995 0.691 0.148 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00001221 0.00005037 0.0000809 0.0002915 0.001844 0.412 Ws/K Unit Symbol Value typ. Unit Tj R th1 R th,n T case E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 2.1 Page 4 2008-04-07 SPS01N60C3 1 Power dissipation Ptot = f (TC) 12 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 1 W A 10 9 Ptot 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 10 -1 ID 8 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC C 160 10 -2 0 10 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 2 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 2.5 K/W A 10 1 20V 10V 7V 6.5V ZthJC ID 10 0 1.5 6V 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 1 s 10 1 5.5V 0.5 5V 10 -2 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 0 0 5 10 15 V VDS 25 tp Rev. 2.1 Page 5 2008-04-07 SPS01N60C3 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.5 A, VGS = 10 V 34 6 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 2.5 28 A RDS(on) 24 ID 20 16 12 8 4 0 -60 98% typ -20 20 60 100 C 1.5 1 0.5 180 0 0 4 8 12 VGS 20 Tj V 7 Typ. gate charge VGS = f (QGate ) parameter: ID = 0.8 A pulsed 16 V 8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 1 A 12 VGS 0.2 VDS max 0.8 VDS max 10 0 8 6 IF 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) nC 10 4 2 10 -2 0 0 0 1 2 3 4 5.5 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Rev. 2.1 Page 6 VSD 2008-04-07 SPS01N60C3 9 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 0.9 10 Avalanche energy EAS = f (Tj) par.: ID = 0.6 A, V DD = 50 V 22 A mJ 18 0.7 0.6 0.5 0.4 0.3 0.2 Tj(START) =25C 16 EAS Tj(START) =125C -2 -1 0 1 2 IAR 14 12 10 8 6 4 0.1 0 -3 10 2 10 10 10 10 10 s 10 tAR 4 0 25 50 75 100 125 150 200 C Tj 11 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 12 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 3 V pF Ciss 10 2 V(BR)DSS 680 660 640 620 600 580 560 540 -60 10 0 0 10 1 C Coss Crss -20 20 60 100 C 180 10 20 30 40 50 60 70 80 Tj Rev. 2.1 Page 7 V 100 VDS 2008-04-07 SPS01N60C3 Definition of diodes switching characteristics Rev. 2.1 Page 8 2008-04-07 SPS01N60C3 PG-TO-251-3-11 Rev. 2.1 Page 9 2008-04-07 SPS01N60C3 Rev. 2.1 Page 10 2008-04-07 |
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